PoX, the evolution of ultra-fast memory | 3 components of computer hardware | Types of computer hardware | Hardware | Turtles AI

A team from Fudan University has developed "PoX," a non-volatile flash memory capable of writing a single bit in 400 picoseconds, achieving 25 billion operations per second. This innovation could revolutionize AI hardware by eliminating memory bottlenecks.

Key points:

• Unprecedented speed: PoX writes data in 400 picoseconds, outperforming current flash memories by 10,000 times.
• Technological innovation: Using two-dimensional graphene for ballistic charge transport.
• AI optimization: Fabrication processes optimized using AI algorithms.
• Industrial implications: Potential elimination of SRAM caches, reducing space and energy in devices.

In a lab at Fudan University in Shanghai, a group of researchers has achieved a breakthrough in the field of digital memory: a non-volatile flash device, called "PoX," capable of writing a single bit in just 400 picoseconds, equivalent to 25 billion operations per second. This far surpasses the performance of traditional flash memories, which operate in microseconds or milliseconds, and approaches the speed of volatile memories such as SRAM and DRAM, while maintaining the ability to retain data without power.

The key to this innovation lies in the adoption of two-dimensional Dirac graphene in place of traditional silicon channels. Graphene, known for its exceptional electrical conduction properties, enables ballistic charge transport, dramatically reducing write times. Furthermore, by adjusting the "Gaussian length" of the channel, the researchers achieved "two-dimensional super-injection," a virtually unlimited flow of charge into the storage layer, overcoming the traditional limitations of charge injection.

To refine the fabrication process, the team employed AI algorithms, optimizing test conditions and pushing the non-volatile memory to its theoretical limit. According to Zhou Peng, project leader, this combination of advanced materials and AI optimization paves the way for new applications for high-speed flash memory.

The industrial implications of PoX are significant. The ability to eliminate high-speed SRAM caches in AI chips could reduce device space and power consumption. Additionally, the ability to store data without power makes PoX ideal for edge devices and battery-constrained systems, such as smartphones and laptops, improving power efficiency and performance.

The Fudan team is currently working to scale up the cell architecture and conduct array-level demonstrations. While no commercial partners have been named, Chinese foundries are exploring the integration of 2D materials with traditional CMOS lines, suggesting potential compatibility with existing manufacturing processes.

This innovation represents a significant step toward the next generation of storage devices, with the potential to transform the entire technology landscape.